? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c69a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c69a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-247 6 g to-264 10 g g = gate d = drain s = source tab = drain ds99220(12/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 300 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 49 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet IXFH69N30P v dss = 300 v ixfk69n30p i d25 = 69 a r ds(on) = 49 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode fast intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic diode advantages z easy to mount z space savings z high power density g d s to-247 (ixfh) to-264 (ixfk) d (tab) d (tab) g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 69n30p ixfk 69n30p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 30 48 s c iss 4960 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 760 pf c rss 190 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 25 ns t d(off) r g = 4 ? (external) 75 ns t f 27 ns q g(on) 156 180 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 32 nc q gd 79 nc r thjc 0.25 k/w r thck (to-247) 0.21 k/w (to-264) 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 69 a i sm repetitive 200 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 100 200 ns -di/dt = 100 a/ s q rm v r = 100 v 500 nc ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 01 23 456 78 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 00.511.522.533.54 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 69a i d = 34.5a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 20 40 60 80 100 120 140 160 180 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v ixfh 69n30p ixfk 69n30p
ixys reserves the right to change limits, test conditions, and dimensions. fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate char ge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 150v i d = 34.5a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 44.5 55.5 66.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20406080100120140 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.40.5 0.60.7 0.80.9 1 1.1 1.21.3 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 25s 1ms dc t c = 25oc r ds (on) limit 10ms ixfh 69n30p ixfk 69n30p
? 2004 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixfh 69n30p ixfk 69n30p
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